Optical properties of InGaAs self-assembled quantum dots with InAlAs wetting layer
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | acta physica sinica
 |
| 出版日期 | 2003 |
| 卷号 | 52期号:8页码:2087-2091 |
| 关键词 | InGaAs quantum dots InAlAs wetting layer photoluminescence spectra TEMPERATURE-DEPENDENCE |
| ISSN号 | 1000-3290 |
| 通讯作者 | zhu tw,chinese acad sci,inst semicond,key lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | a new self-assembled quantum dots system where ingaas dots are formed on inalas wetting layer and embedded in gaas matrix has been fabricated. the photoluminescence linewidth increases with increasing temperature, which is very different from normal in(ga)as/gaas quantum dots. the results are attributed to a higher energy of the wetting layer which breaks the carrier transfer channel between dots and keeps the dots more isolated from each other. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11486]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Optical properties of InGaAs self-assembled quantum dots with InAlAs wetting layer[J]. acta physica sinica,2003,52(8):2087-2091. |
| APA | Xu B.(2003).Optical properties of InGaAs self-assembled quantum dots with InAlAs wetting layer.acta physica sinica,52(8),2087-2091. |
| MLA | Xu B."Optical properties of InGaAs self-assembled quantum dots with InAlAs wetting layer".acta physica sinica 52.8(2003):2087-2091. |
入库方式： OAI收割
来源：半导体研究所
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