Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Qu BZ ; Zhu QS ; Sun XH ; Wan SK ; Wang ZG ; Nagai H ; Kawaguchi Y ; Hiramatsu K ; Sawaki N |
| 刊名 | journal of vacuum science & technology a
 |
| 出版日期 | 2003 |
| 卷号 | 21期号:4页码:838-841 |
| 关键词 | P-TYPE GAN LIGHT-EMITTING-DIODES LOCALIZED EXCITONS GALLIUM NITRIDE FILMS DEFECTS LUMINESCENCE COMPENSATION SPECTROSCOPY ACCEPTORS |
| ISSN号 | 0734-2101 |
| 通讯作者 | qu bz,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | two mg-doped gan films with different doping concentrations were grown by a metalorganic chemical vapor deposition technique. photoluminescence (pl) experiments were carried out to investigate the optical properties of these films. for highly mg-doped gan, the pl spectra at 10 k are composed of a blue luminescence (bl) band at 2.857 ev and two excitonic luminescence lines at 3.342 ev and 3.282 ev, in addition to a l2 phonon replica at 3.212 ev. the intensity of the l1 line decreases monotonously with an increase,in temperature. however, the intensity of the l2 line first slowly increases at first, and then decreases quickly with an increase in temperature. the two lines are attributed to bound excitonic emissions at extended defects. the bl band is most likely due to the transition from deep donor mg-v-n complex to mg shallow acceptor. from the temperature dependence of the luminescence peak intensity of the bl band, the activation energy of acceptor mg was found to be 290 mev. (c) 2003 american vacuum society. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11490]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Qu BZ,Zhu QS,Sun XH,et al. Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition[J]. journal of vacuum science & technology a,2003,21(4):838-841. |
| APA | Qu BZ.,Zhu QS.,Sun XH.,Wan SK.,Wang ZG.,...&Sawaki N.(2003).Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition.journal of vacuum science & technology a,21(4),838-841. |
| MLA | Qu BZ,et al."Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition".journal of vacuum science & technology a 21.4(2003):838-841. |
入库方式： OAI收割
来源：半导体研究所
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