Study on variable capacitance diode of (p)nc-Si : H/(n)c-Si heterojunction
文献类型：期刊论文
| 作者 | Wei WS ; Wang TM ; Zhang CX ; Li GH ; Li YX |
| 刊名 | vacuum
 |
| 出版日期 | 2003 |
| 卷号 | 71期号:4页码:465-469 |
| 关键词 | nc-Si : H film (p)nc-Si : H/(n)c-Si heterojunction variable capacitance diode NANOCRYSTALLINE SILICON FILMS ELECTRICAL CHARACTERIZATION CONDUCTION MECHANISM SPECTROSCOPY STATES |
| ISSN号 | 0042-207x |
| 通讯作者 | wei ws,beijing univ aeronaut & astronaut,sch sci,ctr mat phys & chem,sch sci,beijing 100083,peoples r china. |
| 中文摘要 | hydrogenated nanocrystalline silicon (nc-si:h) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using plasma enhanced chemical vapor deposition (pecvd) system. after evaporating ohm contact electrode on the side of substrate and on the side of nc-si:h film, a structure of electrode/ (p)nc-si:h/(n)c-si/electrode was obtained. it is confirmed by electrical measurement such as i-v curve, c-v curve and dlts that this is a variable capacitance diode. (c) 2003 elsevier science ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11492]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wei WS,Wang TM,Zhang CX,et al. Study on variable capacitance diode of (p)nc-Si : H/(n)c-Si heterojunction[J]. vacuum,2003,71(4):465-469. |
| APA | Wei WS,Wang TM,Zhang CX,Li GH,&Li YX.(2003).Study on variable capacitance diode of (p)nc-Si : H/(n)c-Si heterojunction.vacuum,71(4),465-469. |
| MLA | Wei WS,et al."Study on variable capacitance diode of (p)nc-Si : H/(n)c-Si heterojunction".vacuum 71.4(2003):465-469. |
入库方式： OAI收割
来源：半导体研究所
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