Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon
文献类型：期刊论文
| 作者 | Xu YY ; Liao XB ; Kong GL ; Zeng XB ; Hu ZH ; Diao HW ; Zhang SB |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 256期号:1-2页码:27-32 |
| 关键词 | nanostructures growth from vapor chemical vapor deposition processes semiconducting silicon A-SI-H MICROCRYSTALLINE SILICON EXCITATION-FREQUENCY HYDROGENATED SILICON DEPOSITION PLASMA TEMPERATURE |
| ISSN号 | 0022-0248 |
| 通讯作者 | xu yy,chinese acad sci,inst semicond,state key lab surface phys,ctr condensed matter phys,beijing 100083,peoples r china. |
| 中文摘要 | hydrogenated silicon (si:h) films near the threshold of crystallinity were prepared by very high-frequency plasma-enhanced chemical vapor deposition (vhf-pecvd) using a wide range of hydrogen dilution r-h = [h-2]/[sih4] values of 2-100. the effects of h dilution r-h on the structural properties of the films were investigated using micro-raman scattering and fourier transform infrared (ftir) absorption spectroscopy. the obtained raman spectra show that the h dilution leads to improvements in the short-range order and the medium-range order of the amorphous network and then to the morphological transition from amorphous to crystalline states. the onset of this transition locates between r-h = 30 and 40 in our case, and with further increasing r-h from 40 to 100, the nanocrystalline volume fraction increases from similar to23% to 43%, and correspondingly the crystallite size enlarges from similar to2.8 to 4.4 nm. the ftir spectra exhibit that with r-h increasing, the relative intensities of both the sih stretching mode component at 2100 cm(-1) and wagging mode component at 620 cm(-1) increase in the same manner. we assert that these variations in ir spectra should be associated with the formation of paracrystalline structures in the low h dilution films and nanocrystalline structures in the high h dilution films. (c) 2003 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11498]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu YY,Liao XB,Kong GL,et al. Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon[J]. journal of crystal growth,2003,256(1-2):27-32. |
| APA | Xu YY.,Liao XB.,Kong GL.,Zeng XB.,Hu ZH.,...&Zhang SB.(2003).Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon.journal of crystal growth,256(1-2),27-32. |
| MLA | Xu YY,et al."Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon".journal of crystal growth 256.1-2(2003):27-32. |
入库方式： OAI收割
来源：半导体研究所
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