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Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire
文献类型：期刊论文
| 作者 | Zhao DG
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2003 |
| 卷号 | 83期号:4页码:677-679 |
| 关键词 | VAPOR-PHASE EPITAXY PHONON DEFORMATION POTENTIALS MOLECULAR-BEAM EPITAXY RAMAN-SCATTERING ALPHA-GAN ALN LAYERS STRAIN WURTZITE FILMS |
| ISSN号 | 0003-6951 |
| 通讯作者 | xu sj,univ hong kong,dept phys,pokfulam rd,hong kong,hong kong,peoples r china. |
| 中文摘要 | the stress states in unintentionally doped gan epilayers grown on si(111), 6h-sic(0001), and c-plane sapphire, and their effects on optical properties of gan films were investigated by means of room-temperature confocal micro-raman scattering and photoluminescence techniques. relatively large tensile stress exists in gan epilayers grown on si and 6h-sic while a small compressive stress appears in the film grown on sapphire. the latter indicates effective strain relaxation in the gan buffer layer inserted in the gan/sapphire sample, while the 50-nm-thick aln buffer adopted in the gan/si sample remains highly strained. the analysis shows that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films. finally, a linear coefficient of 21.1+/-3.2 mev/gpa characterizing the relationship between the luminescent bandgap and the biaxial stress of the gan films is obtained. (c) 2003 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11504]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao DG. Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire[J]. applied physics letters,2003,83(4):677-679. |
| APA | Zhao DG.(2003).Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire.applied physics letters,83(4),677-679. |
| MLA | Zhao DG."Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire".applied physics letters 83.4(2003):677-679. |
入库方式： OAI收割
来源：半导体研究所
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