In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(001) substrate
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | applied surface science
 |
| 出版日期 | 2003 |
| 卷号 | 217期号:1-4页码:268-274 |
| 关键词 | strain dislocation interfaces molecular beam epitaxy semiconductor III-V materials CRITICAL THICKNESS COMPLIANT SUBSTRATE RELAXATION |
| ISSN号 | 0169-4332 |
| 通讯作者 | zhang zc,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | thin gaas/alas and gaas/gaas buffer layer structure have been fabricated on the gaas(001) substrate. the top gaas buffer layer is decoupled from the host substrate by introduction of a low temperature thin interlayer (alas or gaas), which was mechanically behaved like the compliant substrate. four hundred nanometer in0.25ga0.75as films were grown on these substrates and the traditional substrate directly. photoluminescence (pl), double-crystal x-ray diffraction (dcxrd) and atomic force microscopy (afm) measurements were used to estimate the quality of the in0.25ga0.75as layer and the compliant effects of the low temperature buffer layer. all the measurements shown that the qualities of epilayer have been improved and the substrate have been deteriorated severely. the growth technique of the thin gaas/alas structure was found to be simple but very powerful for heteroepitaxy. (c) 2003 elsevier science b.v all rights reserved. |
| 学科主题 | 半导体化学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11514]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(001) substrate[J]. applied surface science,2003,217(1-4):268-274. |
| APA | Xu B.(2003).In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(001) substrate.applied surface science,217(1-4),268-274. |
| MLA | Xu B."In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(001) substrate".applied surface science 217.1-4(2003):268-274. |
入库方式： OAI收割
来源：半导体研究所
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