中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Magnetic-field-induced nonthermal occupation of higher subbands in a three-barrier tunneling structure

文献类型:期刊论文

作者Tan PH
刊名spectroscopy and spectral analysis
出版日期2003
卷号23期号:3页码:470-473
关键词resonance tunneling nonthermal occupation intersubband relaxation QUANTUM-WELLS SEMICONDUCTOR SUPERLATTICES POPULATION-INVERSION ELECTRON EMISSION LASER
ISSN号1000-0593
通讯作者an l,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要when injected electrons in a quantum well first experience an intersubband relaxation process before their escaping by tunneling through a double-barrier structure behind, the magnetic suppression of intersubband lo or la phonon scattering can give rise to a noticeable nonthermal occupation in higher-lying subbands. that is clearly verified by the relative intensity ratio of the interband photoluminescence spectra for e-2-hh1 and e-1-hh1 transitions. the observed phenomenon may provide an effective method for controlling intersubband scattering rate, a central issue in so-called quantum cascade lasers, and facilitating the population inversion between subbands in quantum wells.
学科主题半导体物理
收录类别SCI
语种中文
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11516]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Tan PH. Magnetic-field-induced nonthermal occupation of higher subbands in a three-barrier tunneling structure[J]. spectroscopy and spectral analysis,2003,23(3):470-473.
APA Tan PH.(2003).Magnetic-field-induced nonthermal occupation of higher subbands in a three-barrier tunneling structure.spectroscopy and spectral analysis,23(3),470-473.
MLA Tan PH."Magnetic-field-induced nonthermal occupation of higher subbands in a three-barrier tunneling structure".spectroscopy and spectral analysis 23.3(2003):470-473.

入库方式: OAI收割

来源:半导体研究所

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