GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition
文献类型：期刊论文
| 作者 | Chen DJ ; Shen B ; Bi ZX ; Zhang KX ; Gu SL ; Zhang R ; Shi Y ; Zheng YD ; Sun XH ; Wan SK ; Wang ZG |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 255期号:1-2页码:52-56 |
| 关键词 | metalorganic chemical vapor deposition nitrides semiconducting III-V materials MOLECULAR-BEAM EPITAXY GAN-RICH SIDE RADICAL CELL III-V |
| ISSN号 | 0022-0248 |
| 通讯作者 | shen b,nanjing univ,natl lab solid state microstruct,nanjing 210093,peoples r china. |
| 中文摘要 | gan1-xpx ternary alloys with high p compositions were deposited on sapphire substrates by means of metal-organic chemical vapor deposition. depth profiles of the elements indicate that the maximum p/n composition ratio is about 17% and a uniform distribution of the p atoms in the alloys is achieved. 2theta/omega xrd spectra demonstrate that the (0002) peak of the gan1-xpx alloys shifts to smaller angle with increasing p composition. from the photoluminescence (pl) spectra, the red shifts to the bandedge emission of gan are determined to be 73, 78, 100 and 87 mev for the gan1-xpx alloys with the p/n composition ratios of 3%, 11%, 15% and 17%, respectively. no pl peak related to gap is observed, indicating that the phase separation between gan and gap is well suppressed in our gan1-xpx samples. (c) 2003 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11526]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen DJ,Shen B,Bi ZX,et al. GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition[J]. journal of crystal growth,2003,255(1-2):52-56. |
| APA | Chen DJ.,Shen B.,Bi ZX.,Zhang KX.,Gu SL.,...&Wang ZG.(2003).GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition.journal of crystal growth,255(1-2),52-56. |
| MLA | Chen DJ,et al."GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition".journal of crystal growth 255.1-2(2003):52-56. |
入库方式： OAI收割
来源：半导体研究所
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