Controllable growth of semiconductor nanometer structures
文献类型：期刊论文
| 作者 | Wang ZG ; Wu J |
| 刊名 | microelectronics journal
 |
| 出版日期 | 2003 |
| 卷号 | 34期号:5-8页码:379-382 |
| 关键词 | molecular beam epitaxy nanostructures INAS QUANTUM DOTS SELF-ORGANIZATION MONOLAYER COVERAGE DENSITY GAAS ISLANDS INP(001) EPITAXY |
| ISSN号 | 0026-2692 |
| 通讯作者 | wang zg,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | self-assembled quantum dots and wires were obtained in the inxga1-xas/gaas and inas/in0.52al0.48as/inp systems, respectively, using molecular beam epitaxy (mbe). uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the mbe growth parameters. in addition, some interesting observation on the inas wire alignment on inp(001) is discussed. (c) 2003 elsevier science ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11528]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang ZG,Wu J. Controllable growth of semiconductor nanometer structures[J]. microelectronics journal,2003,34(5-8):379-382. |
| APA | Wang ZG,&Wu J.(2003).Controllable growth of semiconductor nanometer structures.microelectronics journal,34(5-8),379-382. |
| MLA | Wang ZG,et al."Controllable growth of semiconductor nanometer structures".microelectronics journal 34.5-8(2003):379-382. |
入库方式： OAI收割
来源：半导体研究所
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