Preparation and characterization of the stable nc-Si/a-Si : H films
文献类型：期刊论文
| 作者 | Xu YY ; Kong GL ; Zhang SB ; Hu ZH ; Zeng XB ; Diao HW ; Liao XB |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2003 |
| 卷号 | 52期号:6页码:1465-1468 |
| 关键词 | amorphous silicon microstructure light-induced changes HYDROGENATED AMORPHOUS-SILICON POLYMORPHOUS SILICON PHASE-TRANSITION STATES DILUTION |
| ISSN号 | 1000-3290 |
| 通讯作者 | xu yy,chinese acad sci,inst semicond,state key lab surface phys,beijing 100083,peoples r china. |
| 中文摘要 | high-quality nc-si/a-si:h diphasic films with improved stability were prepared by using the plasma-enhanced chemical vapor deposition technology. in comparison with typical amorphous silicon, the diphasic silicon films possess higher photoconductivity (two orders larger than that of the amorphous silicon film) and fairly good photosensitivity(the ratio of the photo-to dark-conductivity is about 10) and higher stability (the degradation of the photoconductivity is less than 10% after 24h long light soaking with 50 mw/cm(2) intensity at room temperature). in addition, the diphasic silicon film has a better light spectra response in the longer wavelength range. the improvement in photoelectronic properties may be attributed to: the existence of the disorder within the amorphous matrix, which breaks the momentum selection rule in the optical transition and, consequently, results in the large light absorption coefficient and high photosensitivity; the improved medium range order and low gap states density. excess carriers generated in the amorphous matrix tend to recombine in the embedded crystallites, which suppresses nonradiative recombination within the amorphous matrix and reduces the subsequent defect creation. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11532]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu YY,Kong GL,Zhang SB,et al. Preparation and characterization of the stable nc-Si/a-Si : H films[J]. acta physica sinica,2003,52(6):1465-1468. |
| APA | Xu YY.,Kong GL.,Zhang SB.,Hu ZH.,Zeng XB.,...&Liao XB.(2003).Preparation and characterization of the stable nc-Si/a-Si : H films.acta physica sinica,52(6),1465-1468. |
| MLA | Xu YY,et al."Preparation and characterization of the stable nc-Si/a-Si : H films".acta physica sinica 52.6(2003):1465-1468. |
入库方式： OAI收割
来源：半导体研究所
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