In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots
文献类型：期刊论文
| ; | |
| 作者 | Li MF(李密锋) |
| 刊名 | nanoscale research letters
 ; Nanoscale Research Letters
|
| 出版日期 | 2013 ; 2013 |
| 卷号 | 8期号:1页码:86 |
| 关键词 | InAs quantum dots Sacrificed InAs layer Molecular beam epitaxy Reflection high-energy electron Inas Quantum Dots Sacrificed Inas Layer Molecular Beam Epitaxy Reflection High-energy Electron |
| 学科主题 | 半导体材料 ; 半导体材料 |
| 公开日期 | 2013-06-03 ; 2013-06-03 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24136]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Li MF. In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots, In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots[J]. nanoscale research letters, Nanoscale Research Letters,2013, 2013,8, 8(1):86, 86. |
| APA | Li MF.(2013).In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots.nanoscale research letters,8(1),86. |
| MLA | Li MF."In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots".nanoscale research letters 8.1(2013):86. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。