Magnetic properties and rectifying behaviour of silicon doped with gadolinium
文献类型：期刊论文
| 作者 | Zhou JP ; Chen NF ; Song SL ; Chai CL ; Yang SY ; Liu ZK ; Lin LY |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2003 |
| 卷号 | 52期号:6页码:1469-1473 |
| 关键词 | magnetic semiconductor magnetic p-n junction ion beam epitaxy gadolinium silicides METAL-INSULATOR-TRANSITION P-N-JUNCTION INDUCED FERROMAGNETISM SI/SIER INTERFACE BEAM EPITAXY SEMICONDUCTORS EXCITATION MAGNETORESISTANCE ALLOYS |
| ISSN号 | 1000-3290 |
| 通讯作者 | zhou jp,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | the magnetic/nonmagnetic p-n junction was prepared by implanting gadolinium into the n-type silicon with low-energy dual-ion-beam epitaxy technology. the magnetic layer gdxsi1-x shows excellent magnetic properties at room temperature. high magnetic moment 10mu(b) per gd atom is observed, which is interpreted by rkky mechanism. magnetic/nonmagnetic p-n junctions show rectifying behaviour, but no magnetoresistance is observed. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11534]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou JP,Chen NF,Song SL,et al. Magnetic properties and rectifying behaviour of silicon doped with gadolinium[J]. acta physica sinica,2003,52(6):1469-1473. |
| APA | Zhou JP.,Chen NF.,Song SL.,Chai CL.,Yang SY.,...&Lin LY.(2003).Magnetic properties and rectifying behaviour of silicon doped with gadolinium.acta physica sinica,52(6),1469-1473. |
| MLA | Zhou JP,et al."Magnetic properties and rectifying behaviour of silicon doped with gadolinium".acta physica sinica 52.6(2003):1469-1473. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。