Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate
文献类型：期刊论文
| 作者 | Zhang SM
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 254期号:3-4页码:348-352 |
| 关键词 | in situ laser reflectometry lateral overgrowth metalorganic chemical vapor deposition GaN CHEMICAL-VAPOR-DEPOSITION HIGH-QUALITY GAN BUFFER LAYER THREADING DISLOCATIONS TEMPERATURE EVOLUTION SURFACE MOVPE |
| ISSN号 | 0022-0248 |
| 通讯作者 | chen j,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the influence of reactor pressure on gan nucleation layer (nl) and the quality of subsequent gan on sapphire is studied. the layers were grown by low-pressure metalorganic chemical vapor deposition (mocvd) on c-plane sapphire substrates and investigated by in situ laser reflectometry, atomic force microscope, scanning electron microscope, x-ray diffraction and photoluminescence. with the increase of reactor pressure prior to high-temperature gan growth, the size of gan nuclei formed after annealing decreases, the spacing between nucleation sites increases and the coalescence of gan nuclei is deferred. the optical and crystalline qualities of gan epilayer were improved when nls were deposited at high pressure. the elongated lateral overgrowth of gan islands is responsible for the quality improvement. (c) 2003 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11538]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang SM. Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate[J]. journal of crystal growth,2003,254(3-4):348-352. |
| APA | Zhang SM.(2003).Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate.journal of crystal growth,254(3-4),348-352. |
| MLA | Zhang SM."Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate".journal of crystal growth 254.3-4(2003):348-352. |
入库方式： OAI收割
来源：半导体研究所
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