Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er
文献类型：期刊论文
| 作者 | Chen CY ; Chen WD ; Song SF ; Hsu CC |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 253期号:1-4页码:10-15 |
| 关键词 | low dimensional structures chemical vapor deposition processes nanomaterials semiconducting materials SILICON NANOCRYSTALS LUMINESCENCE EXCITATION |
| ISSN号 | 0022-0248 |
| 通讯作者 | chen cy,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | correlations between si nanocrystal (nc-si) related photoluminescence (pl), er3+ emission and nonradiative defects in the er-doped sio2 films containing nc-si (srso) are studied. upon 514.5 nm laser excitation the erbium-doped srso samples exhibit pl peaks at around 0.8 and 1.54 mum, which can be assigned to the electron-hole recombination in nc-si and the intra-4f transition in er3+, respectively. with increasing er3+ content in the films, er3+ emission becomes intense while the pl at 0.8 mum decreases, suggesting a strong coupling of nc-si and er 31 ions. hydrogen plasma treatment for the samples improve the pl intensities of the 0.8 and 1.54 mum bands, indicating h passivation for the nonradiative defects existing in the samples. further-more, from the effect of hydrogen treatment for the samples, we observe variation of the number of nonradiative defects with annealing temperatures. (c) 2003 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11542]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen CY,Chen WD,Song SF,et al. Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er[J]. journal of crystal growth,2003,253(1-4):10-15. |
| APA | Chen CY,Chen WD,Song SF,&Hsu CC.(2003).Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er.journal of crystal growth,253(1-4),10-15. |
| MLA | Chen CY,et al."Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er".journal of crystal growth 253.1-4(2003):10-15. |
入库方式： OAI收割
来源：半导体研究所
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