Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser
文献类型：期刊论文
| 作者 | Jin P ; Li CM
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 253期号:1-4页码:198-202 |
| ISSN号 | 0022-0248 |
| 关键词 | lattice-mismatch microstructure radiation X-ray diffraction molecular beam epitaxy infrared devices quantum cascade laser MU-M |
| 通讯作者 | li cm,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | double x-ray diffraction has been used to investigate ingaas/inalas quantum cascade (qc) laser grown on inp substrate by molecule beam epitaxy, by means of which, excellent lattice matching, the interface smoothness, the uniformity of the thickness and the composition of the epilayer are disclosed. what is more, these results are in good agreement with designed value. the largest lattice mismatch is within 0.18% and the intersubband absorption wavelength between two quantized energy levels is achieved at about lambda = 5.1 mum at room temperature. at 77 k, the threshold density of the qc laser is less than 2.6 ka/cm(2) when the repetition rate is 5 khz and the duty cycle is 1%. (c) 2003 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11548]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jin P,Li CM. Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser[J]. journal of crystal growth,2003,253(1-4):198-202. |
| APA | Jin P,&Li CM.(2003).Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser.journal of crystal growth,253(1-4),198-202. |
| MLA | Jin P,et al."Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser".journal of crystal growth 253.1-4(2003):198-202. |
入库方式： OAI收割
来源：半导体研究所
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