Void formation and failure in InGaN/AlGaN double heterostructures
文献类型：期刊论文
| 作者 | Han PD
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 253期号:1-4页码:404-412 |
| 关键词 | defects metalorganic vapor phase epitaxy nitrides semiconducting III-V materials light emitting diodes LIGHT-EMITTING-DIODES MULTIPLE-QUANTUM WELLS THREADING EDGE DISLOCATION VAPOR-PHASE EPITAXY N-TYPE GAN GALLIUM NITRIDE GROWTH STOICHIOMETRY SCATTERING DEFECTS LUMINESCENCE |
| ISSN号 | 0022-0248 |
| 通讯作者 | wang yg,chinese acad sci,inst phys,beijing lab electron microscopy,pob 603,beijing 100080,peoples r china. |
| 中文摘要 | condensed clusters of point defects within an ingan/algan double heterostructure grown by metal-organic vapor phase epitaxy on sapphire substrate have been observed using transmission electron microscopy. the existence of voids results in failure of the heterostructure in electroluminescence. the voids are 50-100 nm in diameter and are distributed inhomogeneously within in0.25ga0.75n/algan active layers. the density of the voids was measured as 10(15) cm(-3), which corresponds to a density of dangling bonds of 10(20) cm(-3). these dangling bonds may fully deplete free carriers in this double heterostructure and result in the heterostructure having high resistivity as confirmed by electrical measurement. (c) 2003 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11552]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han PD. Void formation and failure in InGaN/AlGaN double heterostructures[J]. journal of crystal growth,2003,253(1-4):404-412. |
| APA | Han PD.(2003).Void formation and failure in InGaN/AlGaN double heterostructures.journal of crystal growth,253(1-4),404-412. |
| MLA | Han PD."Void formation and failure in InGaN/AlGaN double heterostructures".journal of crystal growth 253.1-4(2003):404-412. |
入库方式： OAI收割
来源：半导体研究所
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