X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates
文献类型：期刊论文
| 作者 | Shen XM ; Wang YT ; Zheng XH ; Zhang BS ; Chen J ; Feng G ; Yang H |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 254期号:1-2页码:23-27 |
| 关键词 | buffer layers x-ray diffraction metalorganic chemical vapor deposition nitrides VAPOR-PHASE EPITAXY NUCLEATION LAYERS CUBIC GAN (001)GAAS SUBSTRATE STRAIN RELAXATION TEMPERATURE DEPOSITION QUALITY DIODES |
| ISSN号 | 0022-0248 |
| 通讯作者 | shen xm,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | in order to understand the growth feature of gan on gaas (0 0 1) substrates grown by metalorganic chemical vapor deposition (mocvd), the crystallinity of gan buffer layers with different thicknesses was investigated by using double crystal x-ray diffraction (dcxrd) measurements. the xrd results showed that the buffer layers consist of predominantly hexagonal gan (h-gan) and its content increases with buffer layer thickness. the nominal gan (111) reflections with chi at 54.74degrees can be detected easily, while (0 0 2) reflections are rather weak. the integrated intensity of reflections from (111) planes is 4-6 times that of (0 0 2) reflections. possible explanations are presented. (c) 2003 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11554]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Shen XM,Wang YT,Zheng XH,et al. X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates[J]. journal of crystal growth,2003,254(1-2):23-27. |
| APA | Shen XM.,Wang YT.,Zheng XH.,Zhang BS.,Chen J.,...&Yang H.(2003).X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates.journal of crystal growth,254(1-2),23-27. |
| MLA | Shen XM,et al."X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates".journal of crystal growth 254.1-2(2003):23-27. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。