中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

文献类型:期刊论文

作者Lan Q ; Niu ZC ; Zhou DY ; Kong YC ; Wang XD ; Miao ZH ; Feng SL
刊名physica e-low-dimensional systems & nanostructures
出版日期2003
卷号17期号:1-4页码:114-116
关键词quantum dots molecular beam epitaxy photoluminescence
ISSN号1386-9477
通讯作者niu zc,chinese acad sci,natl lab superlattices,inst semicond,beijing 100083,peoples r china.
中文摘要surface morphology and optical properties of 1.3 mum self-organized ingaas/gaas quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. it has been shown that the surface morphology evolution and emission wavelengths of ingaas/gaas qds can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (c) 2002 elsevier science b.v. all rights reserved.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11570]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Lan Q,Niu ZC,Zhou DY,et al. Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE[J]. physica e-low-dimensional systems & nanostructures,2003,17(1-4):114-116.
APA Lan Q.,Niu ZC.,Zhou DY.,Kong YC.,Wang XD.,...&Feng SL.(2003).Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE.physica e-low-dimensional systems & nanostructures,17(1-4),114-116.
MLA Lan Q,et al."Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE".physica e-low-dimensional systems & nanostructures 17.1-4(2003):114-116.

入库方式: OAI收割

来源:半导体研究所

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