Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE
文献类型:期刊论文
作者 | Lan Q ; Niu ZC ; Zhou DY ; Kong YC ; Wang XD ; Miao ZH ; Feng SL |
刊名 | physica e-low-dimensional systems & nanostructures
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出版日期 | 2003 |
卷号 | 17期号:1-4页码:114-116 |
关键词 | quantum dots molecular beam epitaxy photoluminescence |
ISSN号 | 1386-9477 |
通讯作者 | niu zc,chinese acad sci,natl lab superlattices,inst semicond,beijing 100083,peoples r china. |
中文摘要 | surface morphology and optical properties of 1.3 mum self-organized ingaas/gaas quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. it has been shown that the surface morphology evolution and emission wavelengths of ingaas/gaas qds can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (c) 2002 elsevier science b.v. all rights reserved. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/11570] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Lan Q,Niu ZC,Zhou DY,et al. Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE[J]. physica e-low-dimensional systems & nanostructures,2003,17(1-4):114-116. |
APA | Lan Q.,Niu ZC.,Zhou DY.,Kong YC.,Wang XD.,...&Feng SL.(2003).Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE.physica e-low-dimensional systems & nanostructures,17(1-4),114-116. |
MLA | Lan Q,et al."Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE".physica e-low-dimensional systems & nanostructures 17.1-4(2003):114-116. |
入库方式: OAI收割
来源:半导体研究所
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