中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Lasing of CdSSe quantum dots in glass spherical microcavity

文献类型:期刊论文

作者Jiang DS
刊名physica e-low-dimensional systems & nanostructures
出版日期2003
卷号17期号:1-4页码:453-455
关键词spherical microcavity quantum dots lasing
ISSN号1386-9477
通讯作者jiang ds,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要glass spherical microcavities containing cdsse semiconductor quantum dots (qds) of a few microns in diameter are fabricated using a physical method. when a single glass microspherical cavity is excited by a laser beam at room temperature, very strong and sharp whispering gallery modes are shown on the background of pl spectra of cdsse qds, which confirms that coupling between the optical emission of embedded qds and spherical cavity modes is realized. for a glass microsphere only 4.6 mum in diameter, it was found that the energy separation is nearly up to 26 nm both for te and tm modes. with the increasing excitation intensity, the excitation intensity dependence of the emission intensity is not linear in the double-logarithmic scale. above the threshold value, the linewidths of resonance modes become narrower. the lasing behavior is achieved at relatively low excitation intensity at room temperature. high optical stability and low threshold value make this optical system promising in visible microlaser applications. (c) 2002 elsevier science b.v. all rights reserved.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11574]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Jiang DS. Lasing of CdSSe quantum dots in glass spherical microcavity[J]. physica e-low-dimensional systems & nanostructures,2003,17(1-4):453-455.
APA Jiang DS.(2003).Lasing of CdSSe quantum dots in glass spherical microcavity.physica e-low-dimensional systems & nanostructures,17(1-4),453-455.
MLA Jiang DS."Lasing of CdSSe quantum dots in glass spherical microcavity".physica e-low-dimensional systems & nanostructures 17.1-4(2003):453-455.

入库方式: OAI收割

来源:半导体研究所

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