Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth
文献类型：期刊论文
| 作者 | Zhang ZC ; Ren BY ; Chen YH ; Yang SY ; Wang ZG |
| 刊名 | microelectronic engineering
 |
| 出版日期 | 2003 |
| 卷号 | 66期号:1-4页码:504-509 |
| 关键词 | Czochralski method growth from melt semiconductor silicon argon gas flow computer simulation oxygen content FURNACE PRESSURE |
| ISSN号 | 0167-9317 |
| 通讯作者 | zhang zc,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. numeric simulation is a potent tool for solving engineering problems. in this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. a flowing stream of argon gas is described by numeric simulation for the first time. therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (c) 2002 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11580]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang ZC,Ren BY,Chen YH,et al. Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth[J]. microelectronic engineering,2003,66(1-4):504-509. |
| APA | Zhang ZC,Ren BY,Chen YH,Yang SY,&Wang ZG.(2003).Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth.microelectronic engineering,66(1-4),504-509. |
| MLA | Zhang ZC,et al."Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth".microelectronic engineering 66.1-4(2003):504-509. |
入库方式： OAI收割
来源：半导体研究所
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