中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Resonant tunneling of holes in GaMnAs-related double- barrier structures

文献类型:期刊论文

作者Wu HB ; Chang K ; Xia JB ; Peeters FM
刊名journal of superconductivity
出版日期2003
卷号16期号:2页码:279-282
关键词Zeeman effect GaMnAs layer double-barrier structure APPROXIMATION
ISSN号0896-1107
通讯作者wu hb,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要using the multiband quantum transmitting boundary method (mqtbm), hole resonant tunneling through algaas/gamnas junctions is investigated theoretically. because of band-edge splitting in the dms layer, the current for holes with different spins are tuned in resonance at different biases. the bound levels of the "light" hole in the quantum well region turned out to be dominant in the tunneling channel for both "heavy" and "light" holes. the resonant tunneling structure can be used as a spin filter for holes for adjusting the fermi energy and the thickness of the junctions.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11582]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Wu HB,Chang K,Xia JB,et al. Resonant tunneling of holes in GaMnAs-related double- barrier structures[J]. journal of superconductivity,2003,16(2):279-282.
APA Wu HB,Chang K,Xia JB,&Peeters FM.(2003).Resonant tunneling of holes in GaMnAs-related double- barrier structures.journal of superconductivity,16(2),279-282.
MLA Wu HB,et al."Resonant tunneling of holes in GaMnAs-related double- barrier structures".journal of superconductivity 16.2(2003):279-282.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。