中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Green-light-emitting ZnSe nanowires fabricated via vapor phase growth

文献类型:期刊论文

作者Xiang B ; Zhang HZ ; Li GH ; Yang FH ; Su FH ; Wang RM ; Xu J ; Lu GW ; Sun XC ; Zhao Q ; Yu DP
刊名applied physics letters
出版日期2003
卷号82期号:19页码:3330-3332
关键词PHYSICAL EVAPORATION QUANTUM WIRES DOTS DEPOSITION
ISSN号0003-6951
通讯作者yu dp,peking univ,sch phys,state key lab mesoscop phys,beijing 100871,peoples r china.
中文摘要stoichiometric znse nanowires have been synthesized through a vapor phase reaction of zinc and selenium powder on the (100) silicon substrate coated with a gold film of 2 nm in thickness. the microstructures and the chemical compositions of the as-grown nanowires have been investigated by means of electron microscopy, the energy dispersive spectroscopy, and raman spectroscopy. the results reveal that the as-grown materials consist of znse nanowires with diameters ranging from 5 to 50 nm. photoluminescence of the sample demonstrates a strong green emission from room temperature down to 10 k. this is attributed to the recombination of electrons from conduction band to the medium deep au acceptors. (c) 2003 american institute of physics.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11586]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Xiang B,Zhang HZ,Li GH,et al. Green-light-emitting ZnSe nanowires fabricated via vapor phase growth[J]. applied physics letters,2003,82(19):3330-3332.
APA Xiang B.,Zhang HZ.,Li GH.,Yang FH.,Su FH.,...&Yu DP.(2003).Green-light-emitting ZnSe nanowires fabricated via vapor phase growth.applied physics letters,82(19),3330-3332.
MLA Xiang B,et al."Green-light-emitting ZnSe nanowires fabricated via vapor phase growth".applied physics letters 82.19(2003):3330-3332.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。