Green-light-emitting ZnSe nanowires fabricated via vapor phase growth
文献类型：期刊论文
| 作者 | Xiang B ; Zhang HZ ; Li GH ; Yang FH ; Su FH ; Wang RM ; Xu J ; Lu GW ; Sun XC ; Zhao Q ; Yu DP |
| 刊名 | applied physics letters
 |
| 出版日期 | 2003 |
| 卷号 | 82期号:19页码:3330-3332 |
| 关键词 | PHYSICAL EVAPORATION QUANTUM WIRES DOTS DEPOSITION |
| ISSN号 | 0003-6951 |
| 通讯作者 | yu dp,peking univ,sch phys,state key lab mesoscop phys,beijing 100871,peoples r china. |
| 中文摘要 | stoichiometric znse nanowires have been synthesized through a vapor phase reaction of zinc and selenium powder on the (100) silicon substrate coated with a gold film of 2 nm in thickness. the microstructures and the chemical compositions of the as-grown nanowires have been investigated by means of electron microscopy, the energy dispersive spectroscopy, and raman spectroscopy. the results reveal that the as-grown materials consist of znse nanowires with diameters ranging from 5 to 50 nm. photoluminescence of the sample demonstrates a strong green emission from room temperature down to 10 k. this is attributed to the recombination of electrons from conduction band to the medium deep au acceptors. (c) 2003 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11586]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xiang B,Zhang HZ,Li GH,et al. Green-light-emitting ZnSe nanowires fabricated via vapor phase growth[J]. applied physics letters,2003,82(19):3330-3332. |
| APA | Xiang B.,Zhang HZ.,Li GH.,Yang FH.,Su FH.,...&Yu DP.(2003).Green-light-emitting ZnSe nanowires fabricated via vapor phase growth.applied physics letters,82(19),3330-3332. |
| MLA | Xiang B,et al."Green-light-emitting ZnSe nanowires fabricated via vapor phase growth".applied physics letters 82.19(2003):3330-3332. |
入库方式： OAI收割
来源：半导体研究所
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