Structure and photoluminescence study of InGaAs/GaAs quantum dots grown via cycled (InAs)(n)/(GaAs)(n) monolayer deposition
文献类型：期刊论文
| 作者 | He J ; Wang XD ; Xu B ; Wang ZG ; Qu SC |
| 刊名 | japanese journal of applied physics part 1-regular papers short notes & review papers
 |
| 出版日期 | 2003 |
| 卷号 | 42期号:3页码:1154-1157 |
| 关键词 | MBE InGaAs/GaAs quantum dots photoluminescence morphology MU-M WELL STRUCTURES GAAS LASERS TEMPERATURE STATES INP |
| ISSN号 | 0021-4922 |
| 通讯作者 | he j,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we report the morphology of an ingaas nanostructure grown by molecular beam epitaxy via cycled (inas)(n)/(gaas)(n) monolayer deposition. atomic force microscopy images clearly show that varying monolayer deposition per cycle has significant influence on the size, density and shape of the ingaas nanostructure. low-temperature photoluminescence spectra show the effect of n on the optical quality, and 1.35mum photoluminescence with a linewidth of only 19.2mev at room temperature has been achieved in the (inas)(1)/(gaas)(1) structure. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11594]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | He J,Wang XD,Xu B,et al. Structure and photoluminescence study of InGaAs/GaAs quantum dots grown via cycled (InAs)(n)/(GaAs)(n) monolayer deposition[J]. japanese journal of applied physics part 1-regular papers short notes & review papers,2003,42(3):1154-1157. |
| APA | He J,Wang XD,Xu B,Wang ZG,&Qu SC.(2003).Structure and photoluminescence study of InGaAs/GaAs quantum dots grown via cycled (InAs)(n)/(GaAs)(n) monolayer deposition.japanese journal of applied physics part 1-regular papers short notes & review papers,42(3),1154-1157. |
| MLA | He J,et al."Structure and photoluminescence study of InGaAs/GaAs quantum dots grown via cycled (InAs)(n)/(GaAs)(n) monolayer deposition".japanese journal of applied physics part 1-regular papers short notes & review papers 42.3(2003):1154-1157. |
入库方式： OAI收割
来源：半导体研究所
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