Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy
文献类型：期刊论文
| 作者 | Shen XM ; Feng G ; Zhang BS ; Duan LH ; Wang YT ; Yang H |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 252期号:1-3页码:9-13 |
| 关键词 | scanning electron microscopy X-ray diffraction Metalorganic vapor phase epitaxy selective area growth gallium nitride CUBIC GAN OVERGROWN GAN DEPOSITION GAAS(100) |
| ISSN号 | 0022-0248 |
| 通讯作者 | shen xm,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | selective area growth (sag) of gan on sio2 stripe-patterned gan/gaas(001) substrates was carried out by metalorganic vapor-phase epitaxy. the sag samples were investigated by using x-ray diffraction (xrd) and scanning electron microscopy (sem). sem observations showed that the morphology of sag gan is strongly dependent on the window stripe orientation and slightly affected by the orientation relationship between the window stripes and the gas flow. the (i 1 1)b sidewalls formed on the sag gan stripes are found to be stable. xrd measurements indicated the full-widths at half-maximum (fwhms) of cubic gan (0 0 2) rocking curves are reduced after sag. the measured fwhms with omega-axis parallel to [1(1) over bar 0] are always larger than the fwhm values obtained with omega-axis parallel to [i 10], regardless of the orientation relationship between the w-axis and the gan stripes. (c) 2003 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11596]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Shen XM,Feng G,Zhang BS,et al. Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy[J]. journal of crystal growth,2003,252(1-3):9-13. |
| APA | Shen XM,Feng G,Zhang BS,Duan LH,Wang YT,&Yang H.(2003).Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy.journal of crystal growth,252(1-3),9-13. |
| MLA | Shen XM,et al."Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy".journal of crystal growth 252.1-3(2003):9-13. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。