Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method
文献类型：期刊论文
| 作者 | Qu BZ ; Chen Z ; Lu DC ; Han P ; Liu XG ; Wang XH ; Wang D ; Zhu QS ; Wang ZG |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 252期号:1-3页码:19-25 |
| ISSN号 | 0022-0248 |
| 关键词 | nanostructures metalorganic chemical vapor deposition nitrides CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY SIZE DISTRIBUTION GROWTH GAAS DEPENDENCE EMISSION NUMBER |
| 通讯作者 | qu bz,acad sinica,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | passivation and low temperature method was carried out to grow ingan/gan quantum dots (qds). atomic force microscope observations were performed to investigate the evolution of the surface morphology of the ingan qds superlattices with increasing the superlattices layer number. the result shows that the size of the qds increases with increasing superlattices layer number. the qds height and diameter increase from 18 and 50 run for the monolayer ingan qds to 37 and 80 urn for the four-stacked ingan qds layers, respectively. this result is considered to be due to the stress field from the sub-layer dots. (c) 2003 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11598]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Qu BZ,Chen Z,Lu DC,et al. Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method[J]. journal of crystal growth,2003,252(1-3):19-25. |
| APA | Qu BZ.,Chen Z.,Lu DC.,Han P.,Liu XG.,...&Wang ZG.(2003).Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method.journal of crystal growth,252(1-3),19-25. |
| MLA | Qu BZ,et al."Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method".journal of crystal growth 252.1-3(2003):19-25. |
入库方式： OAI收割
来源：半导体研究所
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