(Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition
文献类型：期刊论文
| 作者 | Zhang FQ ; Chen NF ; Liu XG ; Liu ZK ; Yang SY ; Cha CL |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 252期号:1-3页码:202-207 |
| 关键词 | X-ray diffraction ion beam epitaxy semiconducting III-V materials DILUTED MAGNETIC SEMICONDUCTORS IMPLANTED GAN FERROMAGNETISM INJECTION GAAS MN |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhang fq,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the (ga,mn,n) samples were grown by the implantation of low-energy mn ions into gan/al2o3 substrate at different elevated substrate temperatures with mass-analyzed low-energy dual ion beam deposition system. auger electron spectroscopy depth profile of samples grown at different substrate temperatures indicates that the mn ions reach deeper in samples with higher substrate temperatures. clear x-ray diffraction peak from (ga,mn)n is observed in samples grown at the higher substrate temperature. it indicates that under optimized substrate temperature and annealing conditions the solid solution (ga,mn)n phase in samples was formed with the same lattice structure as gan and different lattice constant. (c) 2003 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11600]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang FQ,Chen NF,Liu XG,et al. (Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition[J]. journal of crystal growth,2003,252(1-3):202-207. |
| APA | Zhang FQ,Chen NF,Liu XG,Liu ZK,Yang SY,&Cha CL.(2003).(Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition.journal of crystal growth,252(1-3),202-207. |
| MLA | Zhang FQ,et al."(Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition".journal of crystal growth 252.1-3(2003):202-207. |
入库方式： OAI收割
来源：半导体研究所
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