Metal-semiconductor-metal ultraviolet photodetector based on GaN
文献类型：期刊论文
| 作者 | Wang J ; Zhao DA ; Liu ZS ; Feng G ; Zhu JJ ; Shen XM ; Zhang BS ; Yang H |
| 刊名 | science in china series g-physics astronomy
 |
| 出版日期 | 2003 |
| 卷号 | 46期号:2页码:198-203 |
| 关键词 | GaN MSM ultraviolet photodetector responsivity LOW-NOISE DETECTORS PHOTODIODES SI(111) GAIN |
| ISSN号 | 1672-1799 |
| 通讯作者 | wang j,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china. |
| 中文摘要 | a metal-semiconductor-metal (msm) ultraviolet photodetector has been fabricated using unintentionally doped n-gan films grown on sapphire substrates. its dark current, photocurrent under the illumination with lambda = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. the dark current of the photodetector is 1.03 na under 5 v bias, and is 15.3 na under 10 v bias. a maximum responsivity of 0.166 a/w has been achieved under the illumination with lambda = 366 nm light and 15 v bias. it exhibits a typical sharp band-edge cutoff at the wavelength of 366 nm, and a high responsivity at the wavelength from 320 nm to 366 nm. its responsivity under the illumination with lambda = 360 nm light increases when the bias voltage increases. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11604]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang J,Zhao DA,Liu ZS,et al. Metal-semiconductor-metal ultraviolet photodetector based on GaN[J]. science in china series g-physics astronomy,2003,46(2):198-203. |
| APA | Wang J.,Zhao DA.,Liu ZS.,Feng G.,Zhu JJ.,...&Yang H.(2003).Metal-semiconductor-metal ultraviolet photodetector based on GaN.science in china series g-physics astronomy,46(2),198-203. |
| MLA | Wang J,et al."Metal-semiconductor-metal ultraviolet photodetector based on GaN".science in china series g-physics astronomy 46.2(2003):198-203. |
入库方式： OAI收割
来源：半导体研究所
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