Room-temperature ferromagnetic semiconductor MnxGa1-xSb
文献类型：期刊论文
| 作者 | Chen NF ; Zhang FQ ; Yang JL ; Liu ZK ; Yang SY ; Chai CL ; Wang ZG ; Hu WR ; Lin LY |
| 刊名 | chinese science bulletin
 |
| 出版日期 | 2003 |
| 卷号 | 48期号:6页码:516-518 |
| 关键词 | MnxGa1-xSb ferromagnetic semiconductor diluted magnetic semiconductors DILUTED MAGNETIC SEMICONDUCTORS GAMNAS |
| ISSN号 | 1001-6538 |
| 通讯作者 | chen nf,chinese acad sci,inst semicond,key lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | ferromagnetic semiconductor mnxga1-xsb single crystals were fabricated by mn-ions implantation, deposition, and the post annealing. magnetic hysteresis-loops in the mnxga1-xsb single crystals were obtained at room temperature (300 k). the structure of the ferromagnetic semiconductor mnxga1-xsb single crystal was analyzed by xray diffraction. the distribution of carrier concentrations in mnxga1-xsb was investigated by electrochemical capacitance-voltage profiler. the content of mn in mnxga1-xsb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by x-ray diffraction. electrochemical capacitance-voltage profiler reveals that the concentration of p-type carriers in mnxga1-xsb is as high as 1 x 10(21) cm(-3), indicating that most of the mn atoms in mnxga1-xsb take the site of ga, and play a role of acceptors. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11608]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen NF,Zhang FQ,Yang JL,et al. Room-temperature ferromagnetic semiconductor MnxGa1-xSb[J]. chinese science bulletin,2003,48(6):516-518. |
| APA | Chen NF.,Zhang FQ.,Yang JL.,Liu ZK.,Yang SY.,...&Lin LY.(2003).Room-temperature ferromagnetic semiconductor MnxGa1-xSb.chinese science bulletin,48(6),516-518. |
| MLA | Chen NF,et al."Room-temperature ferromagnetic semiconductor MnxGa1-xSb".chinese science bulletin 48.6(2003):516-518. |
入库方式： OAI收割
来源：半导体研究所
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