Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance
文献类型：期刊论文
| 作者 | Li CM ; Jin P; Xu B
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2003 |
| 卷号 | 93期号:7页码:4169-4172 |
| 关键词 | FRANZ-KELDYSH OSCILLATIONS MICROSCOPY ISLANDS |
| ISSN号 | 0021-8979 |
| 通讯作者 | jin p,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china. 电子邮箱地址: pengjin@red.semi.ac.cn |
| 中文摘要 | self-assembled inas quantum dots (qds) have been fabricated by depositing 1.6, 1.8, 2.0 and 2.5 monolayer (ml) inas on surfaces of the undoped-n(+) (un+) type gaas structure. room temperature contactless electroreflectance (cer) was employed to study the built-in electric field and the surface fermi level pinning of these qd-covered un+ gaas samples. the cer results show that 1.6 ml inas qds on gaas do not modify the fermi level, whereas for samples with more than 1.6 ml inas coverage, the surface fermi level is moved to the valence band maximum of gaas by about 70 mev (which is independent of the inas deposition thickness) compared to bare gaas. it is concluded that the modification of inas coverage on the fermi level on the gaas surface is due to the qds, rather than to the wetting layer. (c) 2003 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11610]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li CM,Jin P,Xu B. Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance[J]. journal of applied physics,2003,93(7):4169-4172. |
| APA | Li CM,Jin P,&Xu B.(2003).Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance.journal of applied physics,93(7),4169-4172. |
| MLA | Li CM,et al."Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance".journal of applied physics 93.7(2003):4169-4172. |
入库方式： OAI收割
来源：半导体研究所
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