Semiconductor optical amplifier optical gate with graded strained bulk-like active structure
文献类型：期刊论文
| 作者 | Zhang RY ; Dong J ; Feng ZW ; Zhou F ; Tian HL ; Shu HY ; Zhao LJ ; Bian J ; Wang W |
| 刊名 | optical engineering
 |
| 出版日期 | 2003 |
| 卷号 | 42期号:3页码:798-802 |
| 关键词 | graded strained bulk-like active structure semiconductor optical amplifier optical gate SPOT-SIZE CONVERTER WDM APPLICATIONS GAIN |
| ISSN号 | 0091-3286 |
| 通讯作者 | zhang ry,chinese acad sci,inst semicond,natl res ctr optoelect technol,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | a novel semiconductor optical amplifier (soa) optical gate with a graded strained bulk-like active structure is proposed. a fiber-to-fiber gain of 10 db when the coupling loss reaches 7 db/factet and a polarization insensitivity of less than 0.9 db for multiwavelength and different power input signals over the whole operation current are obtained. moreover, for our soa optical gate, a no-loss current of 50 to 70 ma and an extinction ratio of more than 50 db are realized when the injection current is more than no-loss current, and the maximum extinction ratio reaches 71 db, which is critical for crosstalk suppression. (c) 2003 society of photo-optical instrumentation engineers. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11614]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang RY,Dong J,Feng ZW,et al. Semiconductor optical amplifier optical gate with graded strained bulk-like active structure[J]. optical engineering,2003,42(3):798-802. |
| APA | Zhang RY.,Dong J.,Feng ZW.,Zhou F.,Tian HL.,...&Wang W.(2003).Semiconductor optical amplifier optical gate with graded strained bulk-like active structure.optical engineering,42(3),798-802. |
| MLA | Zhang RY,et al."Semiconductor optical amplifier optical gate with graded strained bulk-like active structure".optical engineering 42.3(2003):798-802. |
入库方式： OAI收割
来源：半导体研究所
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