Design of high brightness cubic-GaN LEDs grown on GaAs substrate
文献类型：期刊论文
| 作者 | Zhao DG
|
| 刊名 | journal of the korean physical society
 |
| 出版日期 | 2003 |
| 卷号 | 42期号:0页码:s753-s756 |
| 关键词 | wafer bunding cubic GaN LIGHT-EMITTING-DIODES FIELD-EFFECT TRANSISTOR SINGLE-CRYSTAL GAN MICROWAVE PERFORMANCE MIRROR JUNCTION |
| ISSN号 | 0374-4884 |
| 通讯作者 | sun yp,chinese acad sci,state key lab integrated optoelect,inst semicond,beijing 100083,peoples r china. |
| 中文摘要 | the principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of gan/gaas optical devices by wafer-bonding technique. the calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown gan/gaas samples when a thin ni layer was used as adhesive layer and ag layer as reflective layer. full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11626]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao DG. Design of high brightness cubic-GaN LEDs grown on GaAs substrate[J]. journal of the korean physical society,2003,42(0):s753-s756. |
| APA | Zhao DG.(2003).Design of high brightness cubic-GaN LEDs grown on GaAs substrate.journal of the korean physical society,42(0),s753-s756. |
| MLA | Zhao DG."Design of high brightness cubic-GaN LEDs grown on GaAs substrate".journal of the korean physical society 42.0(2003):s753-s756. |
入库方式： OAI收割
来源：半导体研究所
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