The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well
文献类型：期刊论文
| 作者 | Jiang DS
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 250期号:3-4页码:339-344 |
| 关键词 | quantum wells GaInNAs strain-compensated GaNAs layers MOLECULAR-BEAM EPITAXY PHOTOLUMINESCENCE LASERS THRESHOLD |
| ISSN号 | 0022-0248 |
| 通讯作者 | bian lf,chinese acad sci,inst semicond,state key lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | photoluminescence (pl) properties of gainnas/gaas quantum wells (qws) with strain-compensated ganas layers grown by molecular beam epitaxy are investigated. the temperature-dependent pl spectra of gainnas/gaas qw with and without ganas layers are compared and carefully studied. it is shown that the introduction of ganas layers between well and barrier can effectively extend the emission wavelength, mainly due to the reduction of the barrier potential. the pl peak position up to 1.41 mum is observed at the room temperature. after adding the ganas layers into qw structures, there is no essential deterioration of luminescence efficiency. n-induced localization states are also not remarkably influenced. it implies that with optimized growth condition, high-quality gainnas/gaas qws with strain-compensated ganas layers can be achieved. (c) 2003 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11630]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS. The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well[J]. journal of crystal growth,2003,250(3-4):339-344. |
| APA | Jiang DS.(2003).The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well.journal of crystal growth,250(3-4),339-344. |
| MLA | Jiang DS."The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well".journal of crystal growth 250.3-4(2003):339-344. |
入库方式： OAI收割
来源：半导体研究所
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