Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)
文献类型：期刊论文
| 作者 | Zheng XH ; Wang YT ; Feng ZH ; Yang H ; Chen H ; Zhou JM ; Liang JW |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 250期号:3-4页码:345-348 |
| 关键词 | in-plane strain lattice parameters triple-axis diffraction c-GaN GROWTH FILMS |
| ISSN号 | 0022-0248 |
| 通讯作者 | zheng xh,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | an extended technique derived from triple-axis diffraction setup was proposed to measure lattice parameters of cubic gan(c-gan) films. the fully relaxed lattice parameters of c-gan are determined to be 4.5036+0.0004 angstrom, which is closer to the values of a hypothetical perfect crystal. the speculated zero setting correction (deltatheta) is very slight and within the range of the accuracy of measurement. additionally, we applied this method to analyze strain of four different kinds of c-gan samples. it is found that in-plane strain caused by large lattice mismatch and thermal expansion coefficients mismatch directly influence the epilayer growth at high temperatures, indicating that the relaxation of tensile strain after thermal annealing helps to improve the crystalline quality of c-gan films and optical properties. (c) 2003 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11632]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zheng XH,Wang YT,Feng ZH,et al. Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)[J]. journal of crystal growth,2003,250(3-4):345-348. |
| APA | Zheng XH.,Wang YT.,Feng ZH.,Yang H.,Chen H.,...&Liang JW.(2003).Method for measurement of lattice parameter of cubic GaN layers on GaAs (001).journal of crystal growth,250(3-4),345-348. |
| MLA | Zheng XH,et al."Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)".journal of crystal growth 250.3-4(2003):345-348. |
入库方式： OAI收割
来源：半导体研究所
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