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High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers
文献类型：期刊论文
| 作者 | Zhao DG
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 250期号:3-4页码:354-358 |
| 关键词 | X-ray diffraction metalorganic vapor phase epitaxy nitrides semiconducting III-V materials BUFFER LAYER GAN GROWTH |
| ISSN号 | 0022-0248 |
| 通讯作者 | feng g,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china. |
| 中文摘要 | a new method of measuring the thickness of gan epilayers on sapphire (0 0 0 1) substrates by using double crystal x-ray diffraction was proposed. the ratio of the integrated intensity between the gan epilayer and the sapphire substrate showed a linear relationship with the gan epilayer thickness up to 2.12 mum. it is practical and convenient to measure the gan epilayer thickness using this ratio, and can mostly eliminate the effect of the reabsorption, the extinction and other scattering factors of the gan epilayers. (c) 2003 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11634]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao DG. High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers[J]. journal of crystal growth,2003,250(3-4):354-358. |
| APA | Zhao DG.(2003).High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers.journal of crystal growth,250(3-4),354-358. |
| MLA | Zhao DG."High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers".journal of crystal growth 250.3-4(2003):354-358. |
入库方式： OAI收割
来源：半导体研究所
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