Optical constants of cubic GaN/GaAs(001): Experiment and modeling
文献类型：期刊论文
| 作者 | Munoz M ; Huang YS ; Pollak FH ; Yang H |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2003 |
| 卷号 | 93期号:5页码:2549-2553 |
| 关键词 | MOLECULAR-BEAM EPITAXY HEXAGONAL GAN TEMPERATURE SEMICONDUCTORS TRANSITIONS GROWTH GAIN ALN ELLIPSOMETRY WURTZITE |
| ISSN号 | 0021-8979 |
| 通讯作者 | munoz m,cuny city coll,dept chem,convent ave & 138th st,new york,ny 10031 usa. |
| 中文摘要 | the optical constants epsilon(e)=epsilon(1)(e)+iepsilon(2)(e) of unintentionally doped cubic gan grown on gaas(001) have been measured at 300 k using spectral ellipsometry in the range of 1.5-5.0 ev. the epsilon(e) spectra display a structure, associated with the critical point at e-0 (direct gap) and some contribution mainly coming from the e-1 critical point. the experimental data over the entire measured spectral range (after oxide removal) has been fit using the holden-munoz model dielectric function [m. munoz et al., j. appl. phys. 92, 5878 (2002)]. this model is based on the electronic energy-band structure near critical points plus excitonic and band-to-band coulomb-enhancement effects at e-0, e-0 + delta(0) and the e-1, e-1 + delta(1), doublet. in addition to evaluating the energy of the e-0 critical point, the binding energy (r-1) of the two-dimensional exciton related to the e-1 critical point was estimated using the effective mass/k.p theory. the line, shape of the imaginary part of the cubic-gan dielectric function shows excitonic effects at room temperature not withstanding that the exciton was not resolved. (c) 2003 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11646]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Munoz M,Huang YS,Pollak FH,et al. Optical constants of cubic GaN/GaAs(001): Experiment and modeling[J]. journal of applied physics,2003,93(5):2549-2553. |
| APA | Munoz M,Huang YS,Pollak FH,&Yang H.(2003).Optical constants of cubic GaN/GaAs(001): Experiment and modeling.journal of applied physics,93(5),2549-2553. |
| MLA | Munoz M,et al."Optical constants of cubic GaN/GaAs(001): Experiment and modeling".journal of applied physics 93.5(2003):2549-2553. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。