The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate
文献类型：期刊论文
| 作者 | Zhang JY ; Jiang DS
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 249期号:3-4页码:538-543 |
| 关键词 | photoluminescence metalorganic chemical vapor deposition epilayer semiconducting II-VI materials MOLECULAR-BEAM EPITAXY GAP |
| ISSN号 | 0022-0248 |
| 通讯作者 | lu sl,chinese acad sci,inst semicond,state key lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | zn1-xmnxse thin films with different mn compositions are grown by metal-organic chemical vapor deposition on gaas substrate. good crystallinity of sample is evidenced by x-ray diffraction and rocking-curve measurements. photoluminescence (pl) properties were carefully studied. a dominant pl peak close to the band edge is observed at low temperature for samples with higher mn concentration. the temperature-dependent pl and time-resolved photoluminescence show that this emission peak is associated with the recombination of exciton bound to mn-induced impurity bound states. it is found that rapid thermal annealing can induce reorganization of mn composition in alloys and significantly reduce the density of impurity induced by mn incorporation and improve the intrinsic interband transition. (c) 2002 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11648]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang JY,Jiang DS. The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate[J]. journal of crystal growth,2003,249(3-4):538-543. |
| APA | Zhang JY,&Jiang DS.(2003).The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate.journal of crystal growth,249(3-4),538-543. |
| MLA | Zhang JY,et al."The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate".journal of crystal growth 249.3-4(2003):538-543. |
入库方式： OAI收割
来源：半导体研究所
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