Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells
文献类型：期刊论文
| 作者 | Li Q ; Fang ZL ; Xu SJ ; Li GH ; Xie MH ; Tong SY ; Zhang XH ; Liu W ; Chua SJ |
| 刊名 | physica status solidi b-basic research
 |
| 出版日期 | 2003 |
| 卷号 | 235期号:2页码:427-431 |
| 关键词 | PIEZOELECTRIC FIELD PHOTOLUMINESCENCE TEMPERATURE |
| ISSN号 | 0370-1972 |
| 通讯作者 | xu sj,univ hong kong,dept phys,pokfulam rd,hong kong,hong kong,peoples r china. |
| 中文摘要 | excitation-power dependence of hydrostatic pressure coefficients (de/dp) of inxga1-xn/inyga1-yn multiple quantum wells is reported. when the excitation power increases from 1.0 to 33 mw, de/dp increases from 26.9 to 33.8 mev/gpa, which is an increase by 25%. a saturation behavior of de/dp with the excitation power is observed. the increment of de/dp with increasing carrier density is explained by an reduction of the internal piezoelectric field due to an efficient screening effect of the free carriers on the field. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11652]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li Q,Fang ZL,Xu SJ,et al. Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells[J]. physica status solidi b-basic research,2003,235(2):427-431. |
| APA | Li Q.,Fang ZL.,Xu SJ.,Li GH.,Xie MH.,...&Chua SJ.(2003).Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells.physica status solidi b-basic research,235(2),427-431. |
| MLA | Li Q,et al."Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells".physica status solidi b-basic research 235.2(2003):427-431. |
入库方式： OAI收割
来源：半导体研究所
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