A method to obtain ground state electroluminescence from 1.3 mu m emitting InAs/GaAs quantum dots grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Kong YC ; Zhou DY ; Lan Q ; Liu JL ; Miao ZH ; Feng SL ; Niu ZC |
| 刊名 | chinese physics
 |
| 出版日期 | 2003 |
| 卷号 | 12期号:1页码:97-99 |
| 关键词 | quantum dots electroluminescence state filling effect OPTICAL-PROPERTIES WAVELENGTH EMISSION LASER GAAS DEPENDENCE LAYER |
| ISSN号 | 1009-1963 |
| 通讯作者 | kong yc,chinese acad sci,inst semicond,state key lab superlattices & micostruct,beijing 100083,peoples r china. |
| 中文摘要 | 1.3 mum emitting inas/gaas quantum dots (qds) have been grown by molecular beam epitaxy and qd light emitting diodes (leds) have been fabricated. in the electroluminescence spectra of qd leds, two clear peaks corresponding to the ground state emission and the excited state emission are observed. it was found that the ground state emission could be achieved by increasing the number of qds contained in the active region because of the state filling effect. this work demonstrates a way to control and tune the emitting wavelength of qd leds and lasers. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11654]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Kong YC,Zhou DY,Lan Q,et al. A method to obtain ground state electroluminescence from 1.3 mu m emitting InAs/GaAs quantum dots grown by molecular beam epitaxy[J]. chinese physics,2003,12(1):97-99. |
| APA | Kong YC.,Zhou DY.,Lan Q.,Liu JL.,Miao ZH.,...&Niu ZC.(2003).A method to obtain ground state electroluminescence from 1.3 mu m emitting InAs/GaAs quantum dots grown by molecular beam epitaxy.chinese physics,12(1),97-99. |
| MLA | Kong YC,et al."A method to obtain ground state electroluminescence from 1.3 mu m emitting InAs/GaAs quantum dots grown by molecular beam epitaxy".chinese physics 12.1(2003):97-99. |
入库方式： OAI收割
来源：半导体研究所
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