Numerical simulation of nc-Si : H/c-Si heterojunction solar cells
文献类型:期刊论文
作者 | Hu ZH ; Liao XB ; Zeng XB ; Xu YY ; Zhang SB ; Diao HW ; Kong GL |
刊名 | acta physica sinica
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出版日期 | 2003 |
卷号 | 52期号:1页码:217-224 |
关键词 | nc-Si : H/c-Si hetero-junction solar cell computer simulation SILICON HETEROJUNCTION LAYER |
ISSN号 | 1000-3290 |
通讯作者 | hu zh,chinese acad sci,state lab surface phys,inst semiconductor,beijing 100083,peoples r china. |
中文摘要 | amps simulator, which was developed by pennsylvania state university, has been used to simulate photovoltaic performances of nc-si:h/c-si solar cells. it is shown that interface states are essential factors prominently influencing open circuit voltages (v-oc) and fill factors (ff) of these structured solar cells. short circuit current density (j(sc)) or spectral response seems more sensitive to the thickness of intrinsic a-si:h buffer layers inserted into n(+)-nc-si:h layer and p-c-si substrates. impacts of bandgap offset on solar cell performances have also been analyzed. as deltae(c) increases, degradation of voc and ff owing to interface states are dramatically recovered. this implies that the interface state cannot merely be regarded as carrier recombination centres, and impacts of interfacial layer on devices need further investigation. theoretical maximum efficiency of up to 31.17% (am1.5,100mw/cm(2), 0.40-1.1mum) has been obtained with bsf structure, idealized light-trapping effect(r-f=0, r-b=1) and no interface states. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 中文 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/11662] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Hu ZH,Liao XB,Zeng XB,et al. Numerical simulation of nc-Si : H/c-Si heterojunction solar cells[J]. acta physica sinica,2003,52(1):217-224. |
APA | Hu ZH.,Liao XB.,Zeng XB.,Xu YY.,Zhang SB.,...&Kong GL.(2003).Numerical simulation of nc-Si : H/c-Si heterojunction solar cells.acta physica sinica,52(1),217-224. |
MLA | Hu ZH,et al."Numerical simulation of nc-Si : H/c-Si heterojunction solar cells".acta physica sinica 52.1(2003):217-224. |
入库方式: OAI收割
来源:半导体研究所
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