中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Numerical simulation of nc-Si : H/c-Si heterojunction solar cells

文献类型:期刊论文

作者Hu ZH ; Liao XB ; Zeng XB ; Xu YY ; Zhang SB ; Diao HW ; Kong GL
刊名acta physica sinica
出版日期2003
卷号52期号:1页码:217-224
关键词nc-Si : H/c-Si hetero-junction solar cell computer simulation SILICON HETEROJUNCTION LAYER
ISSN号1000-3290
通讯作者hu zh,chinese acad sci,state lab surface phys,inst semiconductor,beijing 100083,peoples r china.
中文摘要amps simulator, which was developed by pennsylvania state university, has been used to simulate photovoltaic performances of nc-si:h/c-si solar cells. it is shown that interface states are essential factors prominently influencing open circuit voltages (v-oc) and fill factors (ff) of these structured solar cells. short circuit current density (j(sc)) or spectral response seems more sensitive to the thickness of intrinsic a-si:h buffer layers inserted into n(+)-nc-si:h layer and p-c-si substrates. impacts of bandgap offset on solar cell performances have also been analyzed. as deltae(c) increases, degradation of voc and ff owing to interface states are dramatically recovered. this implies that the interface state cannot merely be regarded as carrier recombination centres, and impacts of interfacial layer on devices need further investigation. theoretical maximum efficiency of up to 31.17% (am1.5,100mw/cm(2), 0.40-1.1mum) has been obtained with bsf structure, idealized light-trapping effect(r-f=0, r-b=1) and no interface states.
学科主题半导体物理
收录类别SCI
语种中文
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11662]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Hu ZH,Liao XB,Zeng XB,et al. Numerical simulation of nc-Si : H/c-Si heterojunction solar cells[J]. acta physica sinica,2003,52(1):217-224.
APA Hu ZH.,Liao XB.,Zeng XB.,Xu YY.,Zhang SB.,...&Kong GL.(2003).Numerical simulation of nc-Si : H/c-Si heterojunction solar cells.acta physica sinica,52(1),217-224.
MLA Hu ZH,et al."Numerical simulation of nc-Si : H/c-Si heterojunction solar cells".acta physica sinica 52.1(2003):217-224.

入库方式: OAI收割

来源:半导体研究所

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