Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation
文献类型：期刊论文
| 作者 | Luo MC ; Li JM ; Wang QM ; Sun GS ; Wang L ; Li GR ; Zeng YP ; Lin LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 249期号:1-2页码:1-8 |
| 关键词 | infrared reflectivity Raman sapphire substrate X-ray diffraction chemical vapor deposition SiC GAN FILMS |
| ISSN号 | 0022-0248 |
| 通讯作者 | luo mc,chinese acad sci,inst semicond,novel semicond mat lab,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the growth of sic epilayers on c-face (0 0 0 1) sapphire (alpha-al2o3) has been performed using cvd method. we found that the quality of sic epilayers has been improved through the nitridation of substrates by exposing them to ammonia ambient, as compared to growth on bare sapphire substrates. the single crystallinity of these layers was verified by xrd and double crystal xrd measurements. atomic force microscopy was used to evaluate the surface morphology. infrared reflectivity and raman scattering measurement were carried out to investigate the phonon modes in the grown sic. detailed raman analysis identified the 6h nature of the as-grown sic films. (c) 2002 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11668]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Luo MC,Li JM,Wang QM,et al. Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation[J]. journal of crystal growth,2003,249(1-2):1-8. |
| APA | Luo MC.,Li JM.,Wang QM.,Sun GS.,Wang L.,...&Lin LY.(2003).Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation.journal of crystal growth,249(1-2),1-8. |
| MLA | Luo MC,et al."Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation".journal of crystal growth 249.1-2(2003):1-8. |
入库方式： OAI收割
来源：半导体研究所
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