Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation
文献类型：期刊论文
| 作者 | Feng ZH ; Yang H ; Zheng XH ; Fu Y ; Sun YP ; Shen XM ; Wang YT |
| 刊名 | applied physics letters
 |
| 出版日期 | 2003 |
| 卷号 | 82期号:2页码:206-208 |
| 关键词 | EPITAXIAL-GROWTH FILMS GAAS |
| ISSN号 | 0003-6951 |
| 通讯作者 | feng zh,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the reduction of residual strain in cubic gan growth by inserting a thermoannealing process is investigated. it is found that the epilayer with smaller tensile strain is subject to a wider optimal "growth window." based on this process, we obtain the high-quality gan film of pure cubic phase with the thickness of 4 mum by metalorganic chemical vapor deposition. the photoluminescence spectrum at room temperature shows the thick gan layer has a near-band emission peak with a full width at half maximum of 42 mev which confirms its high crystal quality, further supported by the x-ray (002) diffraction measurement. a simplified model is demonstrated to interpret this strain effect on the growth process. (c) 2003 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11672]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Feng ZH,Yang H,Zheng XH,et al. Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation[J]. applied physics letters,2003,82(2):206-208. |
| APA | Feng ZH.,Yang H.,Zheng XH.,Fu Y.,Sun YP.,...&Wang YT.(2003).Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation.applied physics letters,82(2),206-208. |
| MLA | Feng ZH,et al."Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation".applied physics letters 82.2(2003):206-208. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。