Silicon nanowires grown on a pre-annealed Si substrate
文献类型：期刊论文
| 作者 | Zeng XB ; Xu YY ; Zhang SB ; Hu ZH ; Diao HW ; Wang YQ ; Kong GL ; Liao XB |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 247期号:1-2页码:13-16 |
| 关键词 | chemical vapor deposition processes nanomaterials semiconducting silicon LASER-ABLATION SEMICONDUCTOR NANOWIRES MECHANISM EVAPORATION DIAMETER WIRES |
| ISSN号 | 0022-0248 |
| 通讯作者 | zeng xb,chinese acad sci,inst semicond,state key lab surface phys,beijing 100083,peoples r china. |
| 中文摘要 | polycrystalline si nanowires (poly sinws) were successfully synthesized by plasma-enhanced chemical vapor deposition (pecvd) at 440degreesc using silane as the si source and au as the catalyst. the diameters of si nanowires range from 15 to 100nm. the growth process indicates that to fabricate sinws by pecvd, pre-annealing at high temperature is necessary. a few interesting nanowires with au nanoclusters uniformly distributed in the body of the wire were also produced by this technique. (c) 2002 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11680]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zeng XB,Xu YY,Zhang SB,et al. Silicon nanowires grown on a pre-annealed Si substrate[J]. journal of crystal growth,2003,247(1-2):13-16. |
| APA | Zeng XB.,Xu YY.,Zhang SB.,Hu ZH.,Diao HW.,...&Liao XB.(2003).Silicon nanowires grown on a pre-annealed Si substrate.journal of crystal growth,247(1-2),13-16. |
| MLA | Zeng XB,et al."Silicon nanowires grown on a pre-annealed Si substrate".journal of crystal growth 247.1-2(2003):13-16. |
入库方式： OAI收割
来源：半导体研究所
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