中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD

文献类型:期刊论文

作者Li DB
刊名journal of crystal growth
出版日期2003
卷号247期号:1-2页码:84-90
关键词surfaces X-ray diffraction growth from high temperature solutions metalorganic chemical vapor deposition nitrides semiconducting III-V materials TIME-RESOLVED PHOTOLUMINESCENCE QUANTUM-WELL LUMINESCENCE DIODES GAN
ISSN号0022-0248
通讯作者huang js,chinese acad sci,inst semicond,beijing 100083,peoples r china.
中文摘要alxinyga1-x-yn epilayers have been grown by metalorganic chemical vapor deposition (mocvd) at different temperatures from 800 to 870degreesc. the incorporation of indium is found to increase with decreasing growth temperature, while the incorporation of al remains nearly constant. the optical properties of the samples have been investigated by photoluminescence (pl) and time-resolved photoluminescence (trpl) at different temperatures. the results show that the sample grown at 820 c exhibits the best optical quality for its large pl intensity and the absence of the yellow luminescence. furthermore the temperature-dependent pl and trpl of the sample reveals its less exciton localization effect caused by alloy fluctuations. in the scanning electron microscopy measurement, much uniform surface morphology is found for the sample grown at 820degreesc, in good agreement with the pl results, the improvement of alxinyga1-x-yn quality is well correlated with the incorporation of indium into algan and the possible mechanism is discussed. (c) 2002 elsevier science b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11684]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
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Li DB. Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD[J]. journal of crystal growth,2003,247(1-2):84-90.
APA Li DB.(2003).Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD.journal of crystal growth,247(1-2),84-90.
MLA Li DB."Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD".journal of crystal growth 247.1-2(2003):84-90.

入库方式: OAI收割

来源:半导体研究所

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