In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 247期号:1-2页码:126-130 |
| 关键词 | dislocation interfaces strain molecular beam epitaxy semiconductor IIIV materials MOLECULAR-BEAM EPITAXY SURFACE-MORPHOLOGY TECHNOLOGY GAAS(001) BEHAVIOR SI |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhang zc,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | high-quality in0.25ga0.75as films were grown on low-temperature (lt) ultra-thin gaas buffer layers formed on gaas (0 0 1) substrate by molecular beam epitaxy. the epilayers were studied by atomic force microscopy (afm), photo luminescence (pl) and double crystal x-ray diffraction (dcxrd), all the measurements indicated that lt thin buffer layer technique is a simple but powerful growth technique for heteroepitaxy. (c) 2002 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11690]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate[J]. journal of crystal growth,2003,247(1-2):126-130. |
| APA | Xu B.(2003).In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate.journal of crystal growth,247(1-2),126-130. |
| MLA | Xu B."In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate".journal of crystal growth 247.1-2(2003):126-130. |
入库方式： OAI收割
来源：半导体研究所
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