Luminescence study of (11(2)over-bar0) GaN film grown by metalorganic chemical-vapor deposition
文献类型：期刊论文
| 作者 | Han PD
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2003 |
| 卷号 | 93期号:1页码:316-319 |
| 关键词 | MG-DOPED GAN GALLIUM NITRIDE PHASE EPITAXY SUBSTRATE LAYER |
| ISSN号 | 0021-8979 |
| 通讯作者 | chen z,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | investigations on photoluminescence properties of (11 (2) over bar0) gan grown on (1 (1) over bar 02) al2o3 substrate by metalorganic chemical-vapor deposition are reported. several emission lines not reported before are observed at low temperature. the sharp peak at 3.359 ev is attributed to the exciton bound to the neutral acceptor. another peak at 3.310 ev represents a free-to-bound, probably a free electron-to-acceptor, transition. the 3.241 and 3.170 ev lines are interpreted as phonon replica lines of the 3.310 ev line. the phonon energy is 70 mev, consistent with the energy of transverse optical e-1 phonon. the optical properties of the lines are analyzed. (c) 2003 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11692]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han PD. Luminescence study of (11(2)over-bar0) GaN film grown by metalorganic chemical-vapor deposition[J]. journal of applied physics,2003,93(1):316-319. |
| APA | Han PD.(2003).Luminescence study of (11(2)over-bar0) GaN film grown by metalorganic chemical-vapor deposition.journal of applied physics,93(1),316-319. |
| MLA | Han PD."Luminescence study of (11(2)over-bar0) GaN film grown by metalorganic chemical-vapor deposition".journal of applied physics 93.1(2003):316-319. |
入库方式： OAI收割
来源：半导体研究所
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