Effects of annealing ambient on the formation of compensation defects in InP
文献类型：期刊论文
| 作者 | Deng AH ; Mascher P ; Zhao YW ; Lin LY |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2003 |
| 卷号 | 93期号:2页码:930-932 |
| 关键词 | UNDOPED SEMIINSULATING INP LOW FE CONTENT POSITRON-LIFETIME PHASE EPITAXY PRESSURE VACANCY INDIUM ANNIHILATION PHOSPHIDE WAFERS |
| ISSN号 | 0021-8979 |
| 通讯作者 | deng ah,sichuan univ,dept appl phys,sichuan 610065,peoples r china. |
| 中文摘要 | positron annihilation lifetime (pal) and photoinduced current transient spectroscopies (picts) have been employed to study the formation of compensation defects in undoped inp under different annealing processes with pure phosphorus (pp) ambience and iron phosphide (ip) ambience, respectively. the different annealing ambiences convert the as-grown n-type undoped inp into two types of semi-insulating (si) states. the positron average lifetimes of as-grown inp, pp si-inp, and ip si-inp are found to be 246, 251, and 243 ps, respectively, which are all longer than the bulk lifetime of 240 ps, indicating the existence of vacancy-type positron-trapping defects. for as-grown inp, vinh4 complexes are the dominant defects. they dissociate into vinhn(0less than or equal tonless than or equal to3) acceptor vacancies under pp ambience annealing, compensating the residual shallow donors and turning the material semi-insulating. in forming ip si-inp, diffusion of iron into v-in complexes under ip ambience annealing produces the substitutional compensation defect fe-in, causing a shorter positron average lifetime. the picts measurements show that a group of vacancy-type defects has been suppressed by iron diffusion during the annealing process, which is in good agreement with the pal results. (c) 2003 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11694]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Deng AH,Mascher P,Zhao YW,et al. Effects of annealing ambient on the formation of compensation defects in InP[J]. journal of applied physics,2003,93(2):930-932. |
| APA | Deng AH,Mascher P,Zhao YW,&Lin LY.(2003).Effects of annealing ambient on the formation of compensation defects in InP.journal of applied physics,93(2),930-932. |
| MLA | Deng AH,et al."Effects of annealing ambient on the formation of compensation defects in InP".journal of applied physics 93.2(2003):930-932. |
入库方式： OAI收割
来源：半导体研究所
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