Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system
文献类型：期刊论文
| 作者 | Yu JZ ; Huang CJ ; Cheng BW ; Zuo YH ; Luo LP ; Wang QM |
| 刊名 | international journal of modern physics b
 |
| 出版日期 | 2002 |
| 卷号 | 16期号:28-29页码:4228-4233 |
| ISSN号 | 0217-9792 |
| 通讯作者 | yu jz,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | type-ii sige/si mqws (multi-quantum wells) and self-organized ge/si islands were successfully grown by a homemade ultra-high vacuum/chemical vapor deposition (uhv/cvd) system. growth characteristics and pl (photoluminescence) spectra at different temperature were measured. it demonstrated that some accumulation of carriers in the islands results in the increase of the integrated pl intensity of island-related at a certain temperature range. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11706]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yu JZ,Huang CJ,Cheng BW,et al. Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system[J]. international journal of modern physics b,2002,16(28-29):4228-4233. |
| APA | Yu JZ,Huang CJ,Cheng BW,Zuo YH,Luo LP,&Wang QM.(2002).Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system.international journal of modern physics b,16(28-29),4228-4233. |
| MLA | Yu JZ,et al."Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system".international journal of modern physics b 16.28-29(2002):4228-4233. |
入库方式： OAI收割
来源：半导体研究所
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