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Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films

文献类型：期刊论文

作者Chen CY ; Chen WD ; Song SF ; Hsu CC
刊名international journal of modern physics b
出版日期2002
卷号16期号:28-29页码:4246-4249
关键词HYDROGENATED AMORPHOUS-SILICON PHOTOLUMINESCENCE LUMINESCENCE INTENSITY SYSTEM
ISSN号0217-9792
通讯作者chen cy,chinese acad sci,inst semicond,beijing 100083,peoples r china.
中文摘要photoluminescence (pl) from er-implanted hydrogenated amorphous silicon suboxide (a-siox:h(x<2.0)) films was measured. two luminescence bands with maxima at lambda congruent to 750 nm and lambda congruent to 1.54mum, ascribed to the a-siox:h intrinsic emission and er3+ emission, were observed. peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000degreesc. micro-raman results indicate that the a-siox:h films are a mixture of two phases, an amorphous siox matrix and amorphous silicon (a-si) domains embedded there in. ftir spectra confirm that hydrogen effusion from a-siox:h films occurs during annealing. hydrogen effusion leads to a reconstruction of the microstructure of a-si domains, thus having a strong influence on er3+ emission. our study emphasizes the role of a-si domains on er3+ emission in a-siox:h films.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11708]  
专题半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式
GB/T 7714		 Chen CY,Chen WD,Song SF,et al. Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films[J]. international journal of modern physics b,2002,16(28-29):4246-4249.
APA Chen CY,Chen WD,Song SF,&Hsu CC.(2002).Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films.international journal of modern physics b,16(28-29),4246-4249.
MLA Chen CY,et al."Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films".international journal of modern physics b 16.28-29(2002):4246-4249.

入库方式： OAI收割

来源：半导体研究所

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