Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers
文献类型：期刊论文
| 作者 | Xu SJ ; Zheng LX ; Cheung SH ; Xie MH ; Tong SY ; Yang H |
| 刊名 | applied physics letters
 |
| 出版日期 | 2002 |
| 卷号 | 81期号:23页码:4389-4391 |
| 关键词 | MOLECULAR-BEAM EPITAXY VAPOR-PHASE EPITAXY CUBIC GAN BINDING-ENERGY PHOTOLUMINESCENCE PRESSURE ELECTRON GAAS ALN |
| ISSN号 | 0003-6951 |
| 通讯作者 | xu sj,univ hong kong,dept phys,pokfulam rd,hong kong,hong kong,peoples r china. |
| 中文摘要 | linewidth broadening of exciton luminescence in wurtzite and zinc-blende gan epilayers was investigated as a function of temperature with photoluminescence. a widely accepted theoretical model was used to fit the experimental data, so that the coupling parameters between exciton and acoustic and longitudinal optical phonons were obtained for both structures. it was found that the coupling constants of both exciton-acoustic optical phonon coupling and exciton-longitudinal optical phonon coupling for zinc-blende gan are almost twice as much as the corresponding values of wurtzite gan. these results show that the relatively strong exciton-phonon scattering seems to be characteristic to zinc-blende gan film. (c) 2002 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11730]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu SJ,Zheng LX,Cheung SH,et al. Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers[J]. applied physics letters,2002,81(23):4389-4391. |
| APA | Xu SJ,Zheng LX,Cheung SH,Xie MH,Tong SY,&Yang H.(2002).Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers.applied physics letters,81(23),4389-4391. |
| MLA | Xu SJ,et al."Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers".applied physics letters 81.23(2002):4389-4391. |
入库方式： OAI收割
来源：半导体研究所
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