Electron and hole transport through quantum dots
文献类型：期刊论文
| 作者 | Li SS ; Abliz A ; Yang FH ; Niu ZC ; Feng SL ; Xia JB ; Hirose K |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2002 |
| 卷号 | 92期号:11页码:6662-6665 |
| 关键词 | CONDUCTANCE QUANTIZATION |
| ISSN号 | 0021-8979 |
| 通讯作者 | li ss,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the transmission through quantum dots (qds) is calculated using the recursion method. in our calculation, the effect of finite offset is taken into account. the results show that the shapes of the qds determine the number of resonant tunneling peaks and the distances between the peaks decrease as the radii of the qds increase. the intensities of the conductance are strongly dependent on the barrier widths. the conductance peaks are split when transmitting through two qds. the theoretical results qualitatively agree with the available experimental data. our calculated results should be useful for the application of qds to photoelectric devices. (c) 2002 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11732]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li SS,Abliz A,Yang FH,et al. Electron and hole transport through quantum dots[J]. journal of applied physics,2002,92(11):6662-6665. |
| APA | Li SS.,Abliz A.,Yang FH.,Niu ZC.,Feng SL.,...&Hirose K.(2002).Electron and hole transport through quantum dots.journal of applied physics,92(11),6662-6665. |
| MLA | Li SS,et al."Electron and hole transport through quantum dots".journal of applied physics 92.11(2002):6662-6665. |
入库方式： OAI收割
来源：半导体研究所
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